Infineon HEXFET Type N-Channel MOSFET, 61 A, 55 V TO-252 IRLR3915TRPBF

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Subtotal (1 pack of 2 units)*

R 54,50

(exc. VAT)

R 62,68

(inc. VAT)

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Per unit
Per Pack*
2 - 8R 27.25R 54.50
10 - 98R 26.57R 53.14
100 - 248R 25.775R 51.55
250 - 498R 24.745R 49.49
500 +R 23.755R 47.51

*price indicative

Packaging Options:
RS stock no.:
258-3999
Mfr. Part No.:
IRLR3915TRPBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

61A

Maximum Drain Source Voltage Vds

55V

Package Type

TO-252

Series

HEXFET

Mount Type

Surface

Maximum Drain Source Resistance Rds

17mΩ

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

16 V

Maximum Power Dissipation Pd

120W

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

61nC

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

Distrelec Product Id

304-40-553

The Infineon HEXFET power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this product are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

Advanced Process Technology

Ultra Low On-Resistance

Fast Switching

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