Infineon HEXFET Type N-Channel MOSFET, 68 A, 60 V Enhancement, 9-Pin DirectFET AUIRF7648M2TR
- RS stock no.:
- 215-2450
- Mfr. Part No.:
- AUIRF7648M2TR
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
View bulk pricing optionSubtotal (1 pack of 5 units)*
R 346,14
(exc. VAT)
R 398,06
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 15 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | R 69.228 | R 346.14 |
| 10 - 95 | R 67.498 | R 337.49 |
| 100 - 245 | R 65.474 | R 327.37 |
| 250 - 495 | R 62.856 | R 314.28 |
| 500 + | R 60.342 | R 301.71 |
*price indicative
- RS stock no.:
- 215-2450
- Mfr. Part No.:
- AUIRF7648M2TR
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 68A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | DirectFET | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 9 | |
| Maximum Drain Source Resistance Rds | 7mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 35nC | |
| Maximum Power Dissipation Pd | 63W | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 68A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type DirectFET | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 9 | ||
Maximum Drain Source Resistance Rds 7mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 35nC | ||
Maximum Power Dissipation Pd 63W | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon Automotive DirectFET® Power MOSFET has 60V maximum drain source voltage with 68A maximum continuous drain current in a DirectFET M4 package. The AUIRF7648M2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve low gate charge as well as the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapour phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET® package allows dual sided cooling to maximize thermal transfer in automotive power systems.
Advanced Process Technology
Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications
Low Rds(on) for Improved Efficiency
Repetitive Avalanche Capability for Robustness and Reliability
Lead free, RoHS and Halogen free
Related links
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 9-Pin DirectFET
- Infineon HEXFET Type N-Channel MOSFET 40 V Enhancement, 9-Pin DirectFET
- Infineon HEXFET Type N-Channel MOSFET 40 V Enhancement, 9-Pin DirectFET AUIRL7736M2TR
- Infineon HEXFET Type N-Channel MOSFET 20 V Enhancement, 2-Pin DirectFET
- Infineon HEXFET Type N-Channel MOSFET 20 V Enhancement, 2-Pin DirectFET
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 6-Pin DirectFET
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 7-Pin DirectFET
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 7-Pin DirectFET