Infineon IPU Type N-Channel MOSFET, 14 A, 950 V, 3-Pin TO-251 IPU95R450P7AKMA1
- RS stock no.:
- 258-3905
- Mfr. Part No.:
- IPU95R450P7AKMA1
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 pack of 2 units)*
R 78,28
(exc. VAT)
R 90,02
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 1,466 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | R 39.14 | R 78.28 |
| 10 - 18 | R 38.16 | R 76.32 |
| 20 - 28 | R 37.015 | R 74.03 |
| 30 - 38 | R 35.535 | R 71.07 |
| 40 + | R 34.115 | R 68.23 |
*price indicative
- RS stock no.:
- 258-3905
- Mfr. Part No.:
- IPU95R450P7AKMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 14A | |
| Maximum Drain Source Voltage Vds | 950V | |
| Series | IPU | |
| Package Type | TO-251 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 450mΩ | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 104W | |
| Typical Gate Charge Qg @ Vgs | 35nC | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 14A | ||
Maximum Drain Source Voltage Vds 950V | ||
Series IPU | ||
Package Type TO-251 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 450mΩ | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 104W | ||
Typical Gate Charge Qg @ Vgs 35nC | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon 950V CoolMOS P7 series delivers outstanding performance in terms of efficiency, thermal behaviour and ease-of-use. As the all other P7 family members, the 950V CoolMOS P7 series comes with an integrated Zener diode ESD protection. The integrated diode considerably improves ESD robustness, thus reducing ESD-related yield loss and reaching exceptional ease-of-use levels. CoolMOS P7 is developed with best-in-class VGS(th) of 3V and a narrow tolerance of only ± 0.5V, which makes it easy to drive and design-in.
Enabling higher power density designs, BOM savings, and lower assembly cost
Easy to drive and to design-in
Better production yield by reducing ESD related failures
Less production issues and reduced field returns
Related links
- Infineon IPU Type N-Channel MOSFET 950 V, 3-Pin TO-251
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- Infineon IPU Type N-Channel MOSFET 950 V Enhancement, 3-Pin PG-TO251-3 IPU95R750P7AKMA1
- Infineon CoolMOS P7 Type N-Channel MOSFET & Diode 950 V Enhancement, 3-Pin TO-251
- Infineon CoolMOS P7 SJ Type N-Channel MOSFET 950 V Enhancement, 3-Pin TO-251
- Infineon CoolMOS P7 Type N-Channel MOSFET & Diode 950 V Enhancement, 3-Pin TO-251 IPU95R2K0P7AKMA1
- Infineon CoolMOS P7 SJ Type N-Channel MOSFET 950 V Enhancement, 3-Pin TO-251 IPU95R3K7P7AKMA1
- Infineon IPD Type N-Channel MOSFET 950 V Enhancement, 3-Pin TO-252 IPD95R450P7ATMA1