Infineon IPU N-Channel MOSFET, 9 A, 950 V Enhancement, 3-Pin PG-TO251-3
- RS stock no.:
- 273-3024
- Mfr. Part No.:
- IPU95R750P7AKMA1
- Manufacturer:
- Infineon
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Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
R 218,61
(exc. VAT)
R 251,40
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 1,490 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | R 43.722 | R 218.61 |
| 10 - 20 | R 42.628 | R 213.14 |
| 25 - 45 | R 41.35 | R 206.75 |
| 50 - 95 | R 39.696 | R 198.48 |
| 100 + | R 38.108 | R 190.54 |
*price indicative
- RS stock no.:
- 273-3024
- Mfr. Part No.:
- IPU95R750P7AKMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 9A | |
| Maximum Drain Source Voltage Vds | 950V | |
| Series | IPU | |
| Package Type | PG-TO251-3 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.75Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Maximum Power Dissipation Pd | 73W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS, JEDEC | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 9A | ||
Maximum Drain Source Voltage Vds 950V | ||
Series IPU | ||
Package Type PG-TO251-3 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.75Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Maximum Power Dissipation Pd 73W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS, JEDEC | ||
Automotive Standard No | ||
The Infineon power MOSFET is designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950V Cool MOS P7 technology focuses on the low power SMPS market. The integrated diode considerably improves ESD robustness, thus reduci
Easy to drive and to design in
Better production yield by reducing ESD related failures
Less production issues and reduced field returns
Related links
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