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Infineon IPU Type N-Channel MOSFET, 9 A, 950 V Enhancement, 3-Pin PG-TO251-3

RS stock no.:: 273-3024
Mfr. Part No.:: IPU95R750P7AKMA1
Manufacturer:: Infineon

Infineon IPU Type N-Channel MOSFET, 9 A, 950 V Enhancement, 3-Pin PG-TO251-3

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Bulk discount available

Subtotal (1 pack of 5 units)*

R 166,84

(exc. VAT)

R 191,865

(inc. VAT)

FREE delivery for orders over R 1,500.00

In Stock

1,490 unit(s) ready to ship from another location

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
5 - 5	R 33.368	R 166.84
10 - 20	R 32.534	R 162.67
25 - 45	R 31.558	R 157.79
50 - 95	R 30.296	R 151.48
100 +	R 29.084	R 145.42

*price indicative

RS stock no.:: 273-3024
Mfr. Part No.:: IPU95R750P7AKMA1
Manufacturer:: Infineon

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	9A
	Maximum Drain Source Voltage Vds	950V
	Series	IPU
	Package Type	PG-TO251-3
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.75Ω
	Channel Mode	Enhancement
	Forward Voltage Vf	0.9V
	Typical Gate Charge Qg @ Vgs	23nC
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	73W
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS, JEDEC
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 9A
	Maximum Drain Source Voltage Vds 950V
	Series IPU
	Package Type PG-TO251-3
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.75Ω
	Channel Mode Enhancement
	Forward Voltage Vf 0.9V
	Typical Gate Charge Qg @ Vgs 23nC
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 73W
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS, JEDEC
	Automotive Standard No

Datasheet - IPU95R750P7AKMA1

The Infineon power MOSFET is designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950V Cool MOS P7 technology focuses on the low power SMPS market. The integrated diode considerably improves ESD robustness, thus reduci

Easy to drive and to design in

Better production yield by reducing ESD related failures

Less production issues and reduced field returns

Infineon IPU Type N-Channel MOSFET, 9 A, 950 V Enhancement, 3-Pin PG-TO251-3

FREE delivery for orders over R 1,500.00

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