Infineon CoolMOS P7 Type N-Channel MOSFET & Diode, 4 A, 950 V Enhancement, 3-Pin TO-251 IPU95R2K0P7AKMA1
- RS stock no.:
- 220-7452
- Mfr. Part No.:
- IPU95R2K0P7AKMA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 15 units)*
R 210,09
(exc. VAT)
R 241,605
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 4,440 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 15 - 15 | R 14.006 | R 210.09 |
| 30 - 75 | R 13.656 | R 204.84 |
| 90 - 225 | R 13.246 | R 198.69 |
| 240 - 465 | R 12.716 | R 190.74 |
| 480 + | R 12.207 | R 183.11 |
*price indicative
- RS stock no.:
- 220-7452
- Mfr. Part No.:
- IPU95R2K0P7AKMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET & Diode | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 950V | |
| Package Type | TO-251 | |
| Series | CoolMOS P7 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 10nC | |
| Maximum Power Dissipation Pd | 37W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 6.22mm | |
| Length | 6.73mm | |
| Width | 2.41 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET & Diode | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 950V | ||
Package Type TO-251 | ||
Series CoolMOS P7 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 10nC | ||
Maximum Power Dissipation Pd 37W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 6.22mm | ||
Length 6.73mm | ||
Width 2.41 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon IPU95R2K0P7 designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950V Cool MOS P7 technology focuses on the low-power SMPS market. It offer 50V more blocking voltage than its predecessor 900V Cool MOS C3, the 950V Cool MOS P7 series delivers outstanding performance in terms of efficiency, thermal behaviour and ease-of-use. As the all other P7 family members, the 950V Cool MOS P7 series comes with an integrated Zener diode ESD protection. The integrated diode considerably improves ESD robustness, thus reducing ESD-related yield loss and reaching exceptional ease-of-use levels. Cool MOS P7 is developed with best-in-class VGS(the) of 3V and a narrow tolerance of only ± 0.5V, which makes it easy to drive and design-in.
Best-in-class FOM RDS(on) Eoss; reduced Qg, Ciss and Coss
Best-in-class DPAK RDS(on) of 450 mΩ
Best-in-class VGS(the) of 3V and smallest VGS(the) variation of ±0.5V
Integrated Zener diode ESD protection up to Class 2 (HBM)
Best-in-class quality and reliability
Related links
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