Infineon IPD Type P-Channel MOSFET, -50 A, -40 V Enhancement, 3-Pin TO-252 IPD50P04P4L11ATMA2

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Subtotal (1 pack of 2 units)*

R 38,91

(exc. VAT)

R 44,746

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 8R 19.455R 38.91
10 - 98R 18.97R 37.94
100 - 248R 18.40R 36.80
250 - 498R 17.665R 35.33
500 +R 16.96R 33.92

*price indicative

Packaging Options:
RS stock no.:
258-3845
Mfr. Part No.:
IPD50P04P4L11ATMA2
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

-50A

Maximum Drain Source Voltage Vds

-40V

Series

IPD

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

10.6mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

45nC

Forward Voltage Vf

-1V

Maximum Gate Source Voltage Vgs

5 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

58W

Maximum Operating Temperature

175°C

Standards/Approvals

DIN IEC 68-1, RoHS

Automotive Standard

AEC-Q101

The Infineon OptiMOS-P2 power-transistor is lowest switching and conduction power losses for highest thermal efficiency. Robust packages with superior quality and reliability.

No charge pump required for high side drive

Simple interface drive circuit

Highest current capability

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