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Infineon IPD Type P-Channel MOSFET, 13.7 A, 100 V Enhancement, 3-Pin TO-252 IPD19DP10NMATMA1

RS stock no.:: 235-4857
Mfr. Part No.:: IPD19DP10NMATMA1
Manufacturer:: Infineon

Infineon IPD Type P-Channel MOSFET, 13.7 A, 100 V Enhancement, 3-Pin TO-252 IPD19DP10NMATMA1

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Bulk discount available

Subtotal (1 pack of 5 units)*

R 160,08

(exc. VAT)

R 184,09

(inc. VAT)

FREE delivery for orders over R 1,500.00

In Stock

Plus 2,480 unit(s) shipping from 29 December 2025

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
5 - 5	R 32.016	R 160.08
10 - 95	R 31.216	R 156.08
100 - 245	R 30.28	R 151.40
250 - 495	R 29.068	R 145.34
500 +	R 27.906	R 139.53

*price indicative

RS stock no.:: 235-4857
Mfr. Part No.:: IPD19DP10NMATMA1
Manufacturer:: Infineon

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	13.7A
	Maximum Drain Source Voltage Vds	100V
	Package Type	TO-252
	Series	IPD
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	186mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	-36nC
	Maximum Power Dissipation Pd	83W
	Forward Voltage Vf	-1.2V
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Height	2.41mm
	Length	6.73mm
	Width	6.22 mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 13.7A
	Maximum Drain Source Voltage Vds 100V
	Package Type TO-252
	Series IPD
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 186mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs -36nC
	Maximum Power Dissipation Pd 83W
	Forward Voltage Vf -1.2V
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Height 2.41mm
	Length 6.73mm
	Width 6.22 mm
	Standards/Approvals No
	Automotive Standard No

Datasheet - IPD19DP10NMATMA1

The Infineon OptiMOS™ P-Channel MOSFETs 100V in DPAK package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. The main advantage of a P-channel device is the reduction of design complexity in medium and low power applications. Its easy Interface to MCU, fast switching as well as avalanche ruggedness makes it suitable for high quality demanding applications. It is available in normal level featuring a wide RDS(on) range and improves efficiency at low loads due to low Qg. It is used in Battery management, Industrial automation.

Available in 4 different packages

Wide range

Normal level and logic level availability

Ideal for high and low switching frequency

Easy Interface to MCU

Low design complexity

Infineon IPD Type P-Channel MOSFET, 13.7 A, 100 V Enhancement, 3-Pin TO-252 IPD19DP10NMATMA1

FREE delivery for orders over R 1,500.00

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