Infineon iPB Type P-Channel MOSFET, 17 A, 800 V Enhancement TO-263 IPB80R290C3AATMA2

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Subtotal (1 unit)*

R 85,35

(exc. VAT)

R 98,15

(inc. VAT)

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Units
Per unit
1 - 9R 85.35
10 - 99R 83.22
100 - 249R 80.72
250 - 499R 77.49
500 +R 74.39

*price indicative

Packaging Options:
RS stock no.:
258-3825
Mfr. Part No.:
IPB80R290C3AATMA2
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

17A

Maximum Drain Source Voltage Vds

800V

Package Type

TO-263

Series

iPB

Mount Type

Surface

Maximum Drain Source Resistance Rds

40.7mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Infineon CoolMOS C3A technology was designed to meet the growing demands of higher system voltages in the area of electric vehicles, such as PHEVs and BEV.

Best-in-class quality and reliability

Higher breakdown voltage

High peak current capability

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