MPN

Infineon iPB Type N-Channel MOSFET, 136 A, 150 V N, 7-Pin TO-263

RS stock no.:: 258-3792
Mfr. Part No.:: IPB060N15N5ATMA1
Manufacturer:: Infineon

Infineon iPB Type N-Channel MOSFET, 136 A, 150 V N, 7-Pin TO-263

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Bulk discount available

Subtotal (1 reel of 1000 units)*

R 59 472,00

(exc. VAT)

R 68 393,00

(inc. VAT)

FREE delivery for orders over R 1,500.00

In Stock

Plus 1,000 unit(s) shipping from 29 December 2025

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Reel*
1000 - 1000	R 59.472	R 59,472.00
2000 - 2000	R 57.985	R 57,985.00
3000 +	R 56.245	R 56,245.00

*price indicative

RS stock no.:: 258-3792
Mfr. Part No.:: IPB060N15N5ATMA1
Manufacturer:: Infineon

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	136A
	Maximum Drain Source Voltage Vds	150V
	Package Type	TO-263
	Series	iPB
	Mount Type	Surface
	Pin Count	7
	Maximum Drain Source Resistance Rds	6mΩ
	Channel Mode	N
	Typical Gate Charge Qg @ Vgs	54.5nC
	Maximum Power Dissipation Pd	250W
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	0.9V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Standards/Approvals	IEC 61249-2-21, RoHS
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 136A
	Maximum Drain Source Voltage Vds 150V
	Package Type TO-263
	Series iPB
	Mount Type Surface
	Pin Count 7
	Maximum Drain Source Resistance Rds 6mΩ
	Channel Mode N
	Typical Gate Charge Qg @ Vgs 54.5nC
	Maximum Power Dissipation Pd 250W
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 0.9V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Standards/Approvals IEC 61249-2-21, RoHS
	Automotive Standard No

Datasheet - IPB060N15N5ATMA1

The Infineon OptiMOS 5 150 V power MOSFETs from Infineon are particularly suitable for low voltage drives such as forklifts and e-scooters, as well as telecom and solar applications. The new products offer a breakthrough reduction in RDS(on) and Qrr without compromising FOM gd and FOM OSS, effectively reducing design effort whilst optimizing system efficiency. Furthermore, the ultra-low reverse recovery charge increases commutation ruggedness.

Lower output charge

Ultra-low reverse recovery charge

Reduced paralleling

Higher power density designs

Infineon iPB Type N-Channel MOSFET, 136 A, 150 V N, 7-Pin TO-263

FREE delivery for orders over R 1,500.00

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