Infineon BSD Type P-Channel MOSFET, -0.39 A, 40 V Enhancement, 6-Pin SOT-363
- RS stock no.:
- 250-0520
- Mfr. Part No.:
- BSD223PH6327XTSA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 reel of 3000 units)*
R 4 557,00
(exc. VAT)
R 5 241,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 20 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | R 1.519 | R 4,557.00 |
| 6000 - 6000 | R 1.481 | R 4,443.00 |
| 9000 + | R 1.437 | R 4,311.00 |
*price indicative
- RS stock no.:
- 250-0520
- Mfr. Part No.:
- BSD223PH6327XTSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | -0.39A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SOT-363 | |
| Series | BSD | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 1.4mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 81W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id -0.39A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SOT-363 | ||
Series BSD | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 1.4mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 81W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon highly innovative OptiMOS™ families include enhancement mode mosfet with Super logic level. It is avalanche and dv/dt rated. It offers fast switching. The device is Pb-free and Halogen-free. The Vds is -20 V, Rds(on) is 1.2 Ω while the Id is -0.39 A.
Consistently meet the highest quality and performance demands
Great on-state resistance and figure of merit characteristics
Related links
- Infineon BSD Type P-Channel MOSFET 40 V Enhancement, 6-Pin SOT-363 BSD223PH6327XTSA1
- Infineon BSD Type N-Channel MOSFET 30 V Enhancement, 6-Pin SOT-363
- Infineon BSD Type N-Channel MOSFET 30 V Enhancement, 6-Pin SOT-363 BSD316SNH6327XTSA1
- Infineon BSV Type P-Channel MOSFET 40 V Enhancement, 6-Pin SOT-363
- Infineon BSD235C 2 Type N 0.95 A 6-Pin SOT-363
- Infineon BSV Type P-Channel MOSFET 40 V Enhancement, 6-Pin SOT-363 BSV236SPH6327XTSA1
- Infineon BSD235C 2 Type N 0.95 A 6-Pin SOT-363 BSD235CH6327XTSA1
- Vishay TrenchFET Type P-Channel MOSFET 12 V Enhancement, 6-Pin SOT-363
