Infineon BSC Type N-Channel MOSFET, 137 A, 60 V N, 8-Pin WSON BSC028N06NSSCATMA1
- RS stock no.:
- 258-0685
- Mfr. Part No.:
- BSC028N06NSSCATMA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
View bulk pricing optionSubtotal (1 pack of 2 units)*
R 90,65
(exc. VAT)
R 104,248
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 3,690 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | R 45.325 | R 90.65 |
| 10 - 98 | R 44.19 | R 88.38 |
| 100 - 248 | R 42.865 | R 85.73 |
| 250 - 498 | R 41.15 | R 82.30 |
| 500 + | R 39.505 | R 79.01 |
*price indicative
- RS stock no.:
- 258-0685
- Mfr. Part No.:
- BSC028N06NSSCATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 137A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | WSON | |
| Series | BSC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 15mΩ | |
| Channel Mode | N | |
| Forward Voltage Vf | 1.2V | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 137A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type WSON | ||
Series BSC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 15mΩ | ||
Channel Mode N | ||
Forward Voltage Vf 1.2V | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon OptiMOS 5 60 V power MOSFETs in SuperSO8 DSC package offer all thermal management benefits of dual-side cooling solutions with industry-standard footprint. SuperSO8 DSC allows excellent thermal performance with two paths for heat dissipation. About 30% of the heat generated on the MOSFET die is transferred through the top and less heat is transferred to the PCB.
Lower conduction losses and switching losses for higher system efficiency
Improved heat dissipation for high power density and improved reliability
Superior power handling capability and ruggedness for longer lifetime
Related links
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