Infineon OptiMOS Type N-Channel MOSFET, 306 A, 60 V TSON

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Bulk discount available

Subtotal (1 reel of 5000 units)*

R 123 815,00

(exc. VAT)

R 142 385,00

(inc. VAT)

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Units
Per unit
Per Reel*
5000 - 5000R 24.763R 123,815.00
10000 - 10000R 24.144R 120,720.00
15000 +R 23.419R 117,095.00

*price indicative

RS stock no.:
258-0678
Mfr. Part No.:
BSC012N06NSATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

306A

Maximum Drain Source Voltage Vds

60V

Package Type

TSON

Series

OptiMOS

Mount Type

Surface

Maximum Drain Source Resistance Rds

15mΩ

Forward Voltage Vf

1.2V

Standards/Approvals

No

Automotive Standard

No

The Infineon OptiMOS MOSFETs in SuperSO8 package extend OptiMOS 3 and 5 product portfolio and enable higher power density in addition to improved robustness, responding to the need for lower system cost and increased performance. Low reverse recovery charge improves the system reliability by providing a significant reduction of voltage overshoot, which minimizes the need for snubber circuits, resulting in less engineering cost and effort.

Lower full load temperature

Less paralleling

Reduced overshoot

Increased system power density

Smaller size

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