Infineon OptiMOS N-Channel MOSFET, 306 A, 60 V Enhancement, 8-Pin TSON BSC012N06NSATMA1
- RS stock no.:
- 258-0678
- Mfr. Part No.:
- BSC012N06NSATMA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (5000 units, on reels of 5000)*
R 177 080,00
(exc. VAT)
R 203 640,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 14 October 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 5000 - 5000 | R 35.416 | R 177,080.00 |
| 10000 - 10000 | R 34.53 | R 172,650.00 |
| 15000 + | R 33.494 | R 167,470.00 |
*price indicative
- RS stock no.:
- 258-0678
- Mfr. Part No.:
- BSC012N06NSATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 306A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | OptiMOS | |
| Package Type | TSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.20mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 214W | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | +175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 306A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series OptiMOS | ||
Package Type TSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.20mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 214W | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature +175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon OptiMOS MOSFETs in SuperSO8 package extend OptiMOS 3 and 5 product portfolio and enable higher power density in addition to improved robustness, responding to the need for lower system cost and increased performance. Low reverse recovery charge improves the system reliability by providing a significant reduction of voltage overshoot, which minimizes the need for snubber circuits, resulting in less engineering cost and effort.
Lower full load temperature
Less paralleling
Reduced overshoot
Increased system power density
Smaller size
Related links
- Infineon OptiMOS Type N-Channel MOSFET 60 V TSON BSC012N06NSATMA1
- Infineon OptiMOS Type N-Channel MOSFET 60 V TDSON
- Infineon OptiMOS Type N-Channel MOSFET 60 V, 8-Pin TDSON
- Infineon OptiMOS Type N-Channel MOSFET 60 V N, 8-Pin SuperSO
- Infineon OptiMOS Type N-Channel MOSFET 60 V N, 8-Pin TSDSON
- Infineon OptiMOS Type N-Channel MOSFET 60 V N, 8-Pin SuperSO
- Infineon OptiMOS Type N-Channel MOSFET & Diode 60 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS Type N-Channel MOSFET & Diode 60 V Enhancement, 3-Pin TO-252