Infineon OptiMOS Type N-Channel MOSFET, 99 A, 80 V Enhancement, 8-Pin PG-TSON-8 IQE022N06LM5CGSCATMA1

RS stock no.:: 284-752
Mfr. Part No.:: IQE022N06LM5CGSCATMA1
Manufacturer:: Infineon

Infineon OptiMOS Type N-Channel MOSFET, 99 A, 80 V Enhancement, 8-Pin PG-TSON-8 IQE022N06LM5CGSCATMA1

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Bulk discount available

Subtotal (1 pack of 5 units)*

R 235,81

(exc. VAT)

R 271,18

(inc. VAT)

FREE delivery for orders over R 1,500.00

In Stock

Plus 100 unit(s) shipping from 26 December 2025

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Units	Per unit	Per Pack*
5 - 45	R 47.162	R 235.81
50 - 95	R 45.982	R 229.91
100 - 495	R 44.602	R 223.01
500 - 995	R 42.818	R 214.09
1000 +	R 41.106	R 205.53

*price indicative

RS stock no.:: 284-752
Mfr. Part No.:: IQE022N06LM5CGSCATMA1
Manufacturer:: Infineon

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	99A
	Maximum Drain Source Voltage Vds	80V
	Series	OptiMOS
	Package Type	PG-TSON-8
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	4.6mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1V
	Maximum Power Dissipation Pd	100W
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	19nC
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS, IEC61249-2-21, JEDEC
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 99A
	Maximum Drain Source Voltage Vds 80V
	Series OptiMOS
	Package Type PG-TSON-8
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 4.6mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1V
	Maximum Power Dissipation Pd 100W
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 19nC
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS, IEC61249-2-21, JEDEC
	Automotive Standard No

Datasheet - IQE022N06LM5CGSCATMA1

The Infineon MOSFET is a power transistor is engineered for high performance in switch mode power supplies, ensuring reliability across demanding applications. Designed within the OptiMOS 5 series, it delivers exceptional efficiency and low on resistance, making it an Ideal choice for synchronous rectification. With its Pb free and RoHS compliant construction, the product not only meets the latest environmental standards but also assures robust performance under varying conditions. This transistor features Advanced thermal management and is avalanche rated, ensuring safer operation and durability in critical settings. Its logic level drive capability allows for seamless integration into a wide range of electronic systems, further exemplifying its versatility and performance stability.

Optimised for high efficiency power conversion

Low on resistance for enhanced performance

Pb free design for environmental compliance

Avalanche tested for increased reliability

Logic level drive simplifies low voltage interfacing

Thermal resistance for efficient heat management

Infineon OptiMOS Type N-Channel MOSFET, 99 A, 80 V Enhancement, 8-Pin PG-TSON-8 IQE022N06LM5CGSCATMA1

FREE delivery for orders over R 1,500.00

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