Infineon HEXFET Type N-Channel MOSFET, 99 A, 60 V TO-252 IRLR3636TRLPBF

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Subtotal (1 pack of 5 units)*

R 123,58

(exc. VAT)

R 142,115

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 45R 24.716R 123.58
50 - 95R 24.098R 120.49
100 - 245R 23.376R 116.88
250 - 995R 22.44R 112.20
1000 +R 21.542R 107.71

*price indicative

Packaging Options:
RS stock no.:
257-9458
Mfr. Part No.:
IRLR3636TRLPBF
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

99A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-252

Series

HEXFET

Maximum Drain Source Resistance Rds

8.3mΩ

Typical Gate Charge Qg @ Vgs

33nC

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

16 V

Maximum Power Dissipation Pd

143W

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon IRLR series is the 60V single n channel power mosfet in a D-Pak package. The strong IRFET power mosfet family is optimized for low RDS (on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including dc motors, battery management systems, inverters, and dc-dc converters.

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Industry standard surface mount package

Silicon optimized for applications switching below 100 kHz

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