Infineon HEXFET Type N-Channel MOSFET, 3.7 A, 200 V, 8-Pin SO-8 IRF7820TRPBF
- RS stock no.:
- 257-9320
- Mfr. Part No.:
- IRF7820TRPBF
- Manufacturer:
- Infineon
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Bulk discount available
View bulk pricing optionSubtotal (1 pack of 5 units)*
R 133,08
(exc. VAT)
R 153,04
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 3,645 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | R 26.616 | R 133.08 |
| 50 - 95 | R 25.95 | R 129.75 |
| 100 - 495 | R 25.172 | R 125.86 |
| 500 - 1995 | R 24.166 | R 120.83 |
| 2000 + | R 23.20 | R 116.00 |
*price indicative
- RS stock no.:
- 257-9320
- Mfr. Part No.:
- IRF7820TRPBF
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3.7A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | HEXFET | |
| Package Type | SO-8 | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 78mΩ | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 2.5W | |
| Typical Gate Charge Qg @ Vgs | 29nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Height | 330mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3.7A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series HEXFET | ||
Package Type SO-8 | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 78mΩ | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 2.5W | ||
Typical Gate Charge Qg @ Vgs 29nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Height 330mm | ||
Automotive Standard No | ||
The Infineon IRF series is the 200V single n channel HEXFET power mosfet in a SO 8 package.
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Normal level is Optimized for 10 V gate drive voltage
Industry standard surface mount package
Capable of being wave soldered
Related links
- Infineon HEXFET Type N-Channel MOSFET 200 V, 8-Pin SO-8
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- Infineon HEXFET Type N-Channel MOSFET 200 V TO-247
- Infineon HEXFET Type N-Channel MOSFET 200 V TO-220
- Infineon HEXFET Type N-Channel MOSFET 200 V TO-262