Infineon HEXFET Type N-Channel MOSFET, 57 A, 100 V SO-8 IRF6644TRPBF
- RS stock no.:
- 257-9296
- Mfr. Part No.:
- IRF6644TRPBF
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 2 units)*
R 74,73
(exc. VAT)
R 85,94
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 4,478 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 48 | R 37.365 | R 74.73 |
| 50 - 98 | R 36.43 | R 72.86 |
| 100 - 498 | R 35.335 | R 70.67 |
| 500 - 1998 | R 33.92 | R 67.84 |
| 2000 + | R 32.565 | R 65.13 |
*price indicative
- RS stock no.:
- 257-9296
- Mfr. Part No.:
- IRF6644TRPBF
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 57A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | HEXFET | |
| Package Type | SO-8 | |
| Maximum Drain Source Resistance Rds | 13mΩ | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Maximum Power Dissipation Pd | 89W | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 57A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series HEXFET | ||
Package Type SO-8 | ||
Maximum Drain Source Resistance Rds 13mΩ | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Maximum Power Dissipation Pd 89W | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon IRF series is the strong IRFET power mosfet family is optimized for low RDS (on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness.
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
High current rating
Dual side cooling capability
Low package height of 0.7mm
Low parasitic (1 to 2 nH) inductance package
100 percent lead free (No RoHS exemption)
Related links
- Infineon HEXFET Type N-Channel MOSFET 100 V SO-8
- Infineon HEXFET Type N-Channel MOSFET 100 V, 3-Pin TO-263
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- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220 IRF3710PBF
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-247
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-247 IRFP3710PBF
- Infineon HEXFET Type N-Channel MOSFET 250 V Enhancement, 3-Pin TO-247
