Infineon HEXFET Type N-Channel MOSFET, 57 A, 100 V, 3-Pin TO-263 IRF3710STRLPBF
- RS stock no.:
- 218-3096
- Distrelec Article No.:
- 304-39-414
- Mfr. Part No.:
- IRF3710STRLPBF
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 10 units)*
R 223,85
(exc. VAT)
R 257,43
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- 4,520 unit(s) shipping from 11 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | R 22.385 | R 223.85 |
| 20 - 90 | R 21.825 | R 218.25 |
| 100 - 240 | R 21.17 | R 211.70 |
| 250 - 490 | R 20.323 | R 203.23 |
| 500 + | R 19.51 | R 195.10 |
*price indicative
- RS stock no.:
- 218-3096
- Distrelec Article No.:
- 304-39-414
- Mfr. Part No.:
- IRF3710STRLPBF
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 57A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 23mΩ | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 86.7nC | |
| Maximum Power Dissipation Pd | 3.8W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | EIA 418 | |
| Width | 9.65 mm | |
| Height | 4.83mm | |
| Length | 10.67mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 57A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 23mΩ | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 86.7nC | ||
Maximum Power Dissipation Pd 3.8W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals EIA 418 | ||
Width 9.65 mm | ||
Height 4.83mm | ||
Length 10.67mm | ||
Automotive Standard No | ||
The Infineon HEXFET series N-channel power MOSFET. The HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. It is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Lead-Free
Related links
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