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Infineon HEXFET Type N-Channel MOSFET, 27 A, 150 V, 8-Pin PQFN IRFH5215TRPBF

RS stock no.:: 257-5871
Mfr. Part No.:: IRFH5215TRPBF
Manufacturer:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 27 A, 150 V, 8-Pin PQFN IRFH5215TRPBF

Image representative of range

Bulk discount available

Subtotal (1 pack of 5 units)*

R 184,75

(exc. VAT)

R 212,45

(inc. VAT)

FREE delivery for orders over R 1,500.00

Last RS stock

Final 4,000 unit(s), ready to ship from another location

Units	Per unit	Per Pack*
5 - 45	R 36.95	R 184.75
50 - 95	R 36.026	R 180.13
100 - 495	R 34.946	R 174.73
500 - 1995	R 33.548	R 167.74
2000 +	R 32.206	R 161.03

*price indicative

RS stock no.:: 257-5871
Mfr. Part No.:: IRFH5215TRPBF
Manufacturer:: Infineon

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	27A
	Maximum Drain Source Voltage Vds	150V
	Series	HEXFET
	Package Type	PQFN
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	58mΩ
	Forward Voltage Vf	1.3V
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	104W
	Typical Gate Charge Qg @ Vgs	21nC
	Maximum Operating Temperature	150°C
	Length	6mm
	Height	0.9mm
	Standards/Approvals	RoHS
	Width	5 mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 27A
	Maximum Drain Source Voltage Vds 150V
	Series HEXFET
	Package Type PQFN
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 58mΩ
	Forward Voltage Vf 1.3V
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 104W
	Typical Gate Charge Qg @ Vgs 21nC
	Maximum Operating Temperature 150°C
	Length 6mm
	Height 0.9mm
	Standards/Approvals RoHS
	Width 5 mm
	Automotive Standard No

Datasheet - IRFH5215TRPBF

The Infineon strongIRFET power MOSFET family is optimized for low RDS and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Low RDSon (< 58 m)

Low thermal resistance to PCB (<12°C/W)

100% Rg tested

Low profile (<09 mm)

Industry-standard pinout

Compatible with existing surface mount techniques

RoHS compliant containing no lead, no bromide and no halogen environmentally

MSL1, industrial qualification

Infineon HEXFET Type N-Channel MOSFET, 27 A, 150 V, 8-Pin PQFN IRFH5215TRPBF

FREE delivery for orders over R 1,500.00

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