Infineon HEXFET Type N-Channel MOSFET, 120 A, 75 V TO-263 IRFB3307PBF
- RS stock no.:
- 257-5799
- Mfr. Part No.:
- IRFB3307PBF
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 2 units)*
R 102,19
(exc. VAT)
R 117,518
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- 1,000 left, ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | R 51.095 | R 102.19 |
| 10 - 18 | R 49.82 | R 99.64 |
| 20 - 48 | R 48.325 | R 96.65 |
| 50 - 98 | R 46.39 | R 92.78 |
| 100 + | R 44.535 | R 89.07 |
*price indicative
- RS stock no.:
- 257-5799
- Mfr. Part No.:
- IRFB3307PBF
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Series | HEXFET | |
| Package Type | TO-263 | |
| Mount Type | PCB | |
| Maximum Drain Source Resistance Rds | 6.3mΩ | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 200W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 75V | ||
Series HEXFET | ||
Package Type TO-263 | ||
Mount Type PCB | ||
Maximum Drain Source Resistance Rds 6.3mΩ | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 200W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon strongIRFET power MOSFET family is optimized for low RDS and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Industry standard through-hole power package
High-current rating
Related links
- Infineon Type N-Channel MOSFET 75 V TO-263
- Infineon OptiMOS 3 Type N-Channel MOSFET 75 V Enhancement, 3-Pin TO-263
- Infineon OptiMOS 3 Type N-Channel MOSFET 75 V Enhancement, 3-Pin TO-263 IPB020NE7N3GATMA1
- onsemi PowerTrench Type N-Channel MOSFET 75 V Enhancement, 3-Pin TO-263 FDB088N08
- STMicroelectronics STripFET Type N-Channel MOSFET 75 V Enhancement, 3-Pin TO-263 STB160N75F3
- STMicroelectronics STripFET Type N-Channel MOSFET 75 V Enhancement, 3-Pin TO-263
- onsemi PowerTrench Type N-Channel MOSFET 75 V Enhancement, 3-Pin TO-263
- STMicroelectronics STripFET F3 Type N-Channel MOSFET 75 V Enhancement, 3-Pin TO-263