Infineon HEXFET Type N-Channel MOSFET, 120 A, 75 V TO-263
- RS stock no.:
- 257-5512
- Mfr. Part No.:
- IRFB3307PBF
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
View bulk pricing optionSubtotal (1 tube of 100 units)*
R 2 247,80
(exc. VAT)
R 2 585,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 900 unit(s) shipping from 01 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 100 - 400 | R 22.478 | R 2,247.80 |
| 500 - 900 | R 21.916 | R 2,191.60 |
| 1000 - 1900 | R 21.258 | R 2,125.80 |
| 2000 - 4900 | R 20.408 | R 2,040.80 |
| 5000 + | R 19.592 | R 1,959.20 |
*price indicative
- RS stock no.:
- 257-5512
- Mfr. Part No.:
- IRFB3307PBF
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Series | HEXFET | |
| Package Type | TO-263 | |
| Mount Type | PCB | |
| Maximum Drain Source Resistance Rds | 6.3mΩ | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 200W | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 75V | ||
Series HEXFET | ||
Package Type TO-263 | ||
Mount Type PCB | ||
Maximum Drain Source Resistance Rds 6.3mΩ | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 200W | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon strongIRFET power MOSFET family is optimized for low RDS and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Industry standard through-hole power package
High-current rating
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