Infineon HEXFET Type N-Channel MOSFET, 16 A, 110 V Enhancement, 3-Pin TO-252 IRFR3910TRLPBF
- RS stock no.:
- 222-4753
- Mfr. Part No.:
- IRFR3910TRLPBF
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 pack of 20 units)*
R 232,20
(exc. VAT)
R 267,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 20 unit(s) shipping from 29 December 2025
- Plus 6,280 unit(s) shipping from 05 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 20 | R 11.61 | R 232.20 |
| 40 - 80 | R 11.32 | R 226.40 |
| 100 - 220 | R 10.98 | R 219.60 |
| 240 - 480 | R 10.541 | R 210.82 |
| 500 + | R 10.12 | R 202.40 |
*price indicative
- RS stock no.:
- 222-4753
- Mfr. Part No.:
- IRFR3910TRLPBF
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 16A | |
| Maximum Drain Source Voltage Vds | 110V | |
| Package Type | TO-252 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.12mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 44nC | |
| Maximum Power Dissipation Pd | 79W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 6.22mm | |
| Standards/Approvals | No | |
| Width | 2.39 mm | |
| Length | 6.73mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 16A | ||
Maximum Drain Source Voltage Vds 110V | ||
Package Type TO-252 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.12mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 44nC | ||
Maximum Power Dissipation Pd 79W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 6.22mm | ||
Standards/Approvals No | ||
Width 2.39 mm | ||
Length 6.73mm | ||
Automotive Standard No | ||
The Infineon design of HEXFET® Power MOSFETs from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Advanced Process Technology
Dynamic dv/dt Rating
Fast Switching
Fully Avalanche Rated
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