Infineon HEXFET Type N-Channel MOSFET, 42 A, 85 V TO-252

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Subtotal (1 reel of 2000 units)*

R 19 052,00

(exc. VAT)

R 21 910,00

(inc. VAT)

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Units
Per unit
Per Reel*
2000 - 2000R 9.526R 19,052.00
4000 +R 9.288R 18,576.00

*price indicative

RS stock no.:
257-5542
Mfr. Part No.:
IRFR2407TRPBF
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

42A

Maximum Drain Source Voltage Vds

85V

Series

HEXFET

Package Type

TO-252

Mount Type

Surface

Maximum Drain Source Resistance Rds

26mΩ

Forward Voltage Vf

1.3V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

110W

Typical Gate Charge Qg @ Vgs

74nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications. The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Planar cell structure for wide SOA

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Silicon optimized for applications switching below <100kHz

Industry standard surface mount package

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