N-Channel MOSFET, 42 A, 55 V, 3-Pin DPAK Infineon IRLR2905TRPBF
- RS stock no.:
- 830-3357
- Mfr. Part No.:
- IRLR2905TRPBF
- Manufacturer:
- Infineon
Subtotal (1 pack of 20 units)**
R 394 60
(exc. VAT)
R 453 80
(inc. VAT)
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over R 1500
Units | Per unit | Per Pack** |
---|---|---|
20 - 80 | R 19,73 | R 394,60 |
100 - 480 | R 19,237 | R 384,74 |
500 - 980 | R 18,66 | R 373,20 |
1000 - 1980 | R 17,913 | R 358,26 |
2000 + | R 17,197 | R 343,94 |
**price indicative
- RS stock no.:
- 830-3357
- Mfr. Part No.:
- IRLR2905TRPBF
- Manufacturer:
- Infineon
Select all | Attribute | Value |
---|---|---|
Manufacturer | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 42 A | |
Maximum Drain Source Voltage | 55 V | |
Package Type | DPAK (TO-252) | |
Series | HEXFET | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 40 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 2V | |
Minimum Gate Threshold Voltage | 1V | |
Maximum Power Dissipation | 110 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -16 V, +16 V | |
Maximum Operating Temperature | +175 °C | |
Typical Gate Charge @ Vgs | 48 nC @ 5 V | |
Number of Elements per Chip | 1 | |
Transistor Material | Si | |
Width | 6.22mm | |
Length | 6.73mm | |
Minimum Operating Temperature | -55 °C | |
Height | 2.39mm | |
Select all | ||
---|---|---|
Manufacturer Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 42 A | ||
Maximum Drain Source Voltage 55 V | ||
Package Type DPAK (TO-252) | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 40 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 110 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -16 V, +16 V | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 48 nC @ 5 V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Width 6.22mm | ||
Length 6.73mm | ||
Minimum Operating Temperature -55 °C | ||
Height 2.39mm | ||
Related links
- N-Channel MOSFET 55 V, 3-Pin DPAK Infineon IRLR2905TRPBF
- N-Channel MOSFET 55 V, 3-Pin DPAK Infineon IRLR2905TRLPBF
- Dual N-Channel MOSFET Transistor & Diode 55 V, 3-Pin DPAK Infineon...
- Dual Silicon N-Channel MOSFET 75 V, 3-Pin DPAK Infineon IRFR2607ZTRPBF
- N-Channel MOSFET 40 V, 3-Pin DPAK Infineon IRFR4104TRLPBF
- N-Channel MOSFET 55 V, 3-Pin DPAK Infineon IPD30N06S2L23ATMA1
- N-Channel MOSFET 55 V, 3-Pin DPAK Infineon IRFR4105ZTRPBF
- Silicon N-Channel MOSFET 55 V, 3-Pin DPAK Infineon IRFR2405TRPBF