Infineon HEXFET Fifth Generation Type N-Channel MOSFET, 1.9 A, 55 V SOT-223
- RS stock no.:
- 257-5538
- Distrelec Article No.:
- 304-40-532
- Mfr. Part No.:
- IRFL014NTRPBF
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 reel of 2500 units)*
R 7 582,50
(exc. VAT)
R 8 720,00
(inc. VAT)
Add 2500 units to get free delivery
In Stock
- 2,500 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 - 2500 | R 3.033 | R 7,582.50 |
| 5000 + | R 2.957 | R 7,392.50 |
*price indicative
- RS stock no.:
- 257-5538
- Distrelec Article No.:
- 304-40-532
- Mfr. Part No.:
- IRFL014NTRPBF
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.9A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Series | HEXFET Fifth Generation | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 0.16Ω | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 7nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 2.1W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | Lead-Free | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.9A | ||
Maximum Drain Source Voltage Vds 55V | ||
Series HEXFET Fifth Generation | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 0.16Ω | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 7nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 2.1W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals Lead-Free | ||
Automotive Standard No | ||
The Infineon MOSFET is fifth generation HEXFETs from international rectifier utilize advanced processing techniques to achieve extremely low.
Planar cell structure for wide SOA
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Silicon optimized for applications switching below <100kHz
Industry standard surface mount package
Related links
- Infineon HEXFET Fifth Generation Type N-Channel MOSFET 55 V SOT-223 IRFL014NTRPBF
- Infineon HEXFET Type N-Channel MOSFET 100 V SOT-223
- Infineon HEXFET Type N-Channel MOSFET 100 V SOT-223 IRFL4310TRPBF
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 4-Pin SOT-223
- Infineon ISP Type P-Channel MOSFET 60 V Enhancement, 3-Pin SOT-223 ISP25DP06NMXTSA1
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 4-Pin SOT-223 IRLL024NTRPBF
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 4-Pin SOT-223 IRFL4105TRPBF
- Infineon CoolMOS Type N-Channel MOSFET 800 V Enhancement, 3-Pin SOT-223
