Infineon HEXFET Fifth Generation Type N-Channel MOSFET, 1.9 A, 55 V SOT-223 IRFL014NTRPBF
- RS stock no.:
- 257-5817
- Mfr. Part No.:
- IRFL014NTRPBF
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 10 units)*
R 53,80
(exc. VAT)
R 61,90
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 4,660 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | R 5.38 | R 53.80 |
| 50 - 90 | R 5.246 | R 52.46 |
| 100 - 240 | R 5.089 | R 50.89 |
| 250 - 990 | R 4.885 | R 48.85 |
| 1000 + | R 4.69 | R 46.90 |
*price indicative
- RS stock no.:
- 257-5817
- Mfr. Part No.:
- IRFL014NTRPBF
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 1.9A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | SOT-223 | |
| Series | HEXFET Fifth Generation | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 0.16Ω | |
| Maximum Power Dissipation Pd | 2.1W | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 7nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | Lead-Free | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 1.9A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type SOT-223 | ||
Series HEXFET Fifth Generation | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 0.16Ω | ||
Maximum Power Dissipation Pd 2.1W | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 7nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals Lead-Free | ||
Automotive Standard No | ||
The Infineon MOSFET is fifth generation HEXFETs from international rectifier utilize advanced processing techniques to achieve extremely low.
Planar cell structure for wide SOA
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Silicon optimized for applications switching below <100kHz
Industry standard surface mount package
Related links
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- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 4-Pin SOT-223
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 4-Pin SOT-223
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 4-Pin SOT-223