Vishay N-Channel MOSFET, 11.3 A, 100 V PowerPAK SISS42LDN-T1-GE3

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Subtotal (1 pack of 5 units)*

R 186,34

(exc. VAT)

R 214,29

(inc. VAT)

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  • 5,970 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
5 - 45R 37.268R 186.34
50 - 95R 36.336R 181.68
100 - 245R 35.246R 176.23
250 - 995R 33.836R 169.18
1000 +R 32.482R 162.41

*price indicative

Packaging Options:
RS stock no.:
256-7435
Mfr. Part No.:
SISS42LDN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

11.3A

Maximum Drain Source Voltage Vds

100V

Package Type

PowerPAK

Mount Type

Surface

Maximum Drain Source Resistance Rds

0.0149Ω

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

The Vishay Semiconductor N-channel 100 V (D-S) mosfet very low RDS x Qg figure-of-merit (FOM) applications synchronous rectification, primary side switch, DC, DC converter, solar micro inverter, motor drive switch, battery and load switch, industrial.

TrenchFET gen IV power mosfet

Very low RDS x Qg figure-of-merit (FOM)

Tuned for the lowest RDS x Qoss FOM

100 % Rg and UIS tested

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