Vishay Si4948BEY Type N-Channel MOSFET, 2.4 A, 60 V, 8-Pin SOIC SI4948BEY-T1-E3
- RS stock no.:
- 256-7363
- Mfr. Part No.:
- SI4948BEY-T1-E3
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
Subtotal (1 pack of 5 units)*
R 145,21
(exc. VAT)
R 166,99
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 1,190 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | R 29.042 | R 145.21 |
| 50 - 95 | R 28.316 | R 141.58 |
| 100 - 245 | R 27.466 | R 137.33 |
| 250 - 995 | R 26.368 | R 131.84 |
| 1000 + | R 25.314 | R 126.57 |
*price indicative
- RS stock no.:
- 256-7363
- Mfr. Part No.:
- SI4948BEY-T1-E3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2.4A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | Si4948BEY | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.4Ω | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 14.5nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS 2002/95/EC, IEC 61249-2-21 | |
| Height | 1.75mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2.4A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series Si4948BEY | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.4Ω | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 14.5nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS 2002/95/EC, IEC 61249-2-21 | ||
Height 1.75mm | ||
Automotive Standard No | ||
The Vishay Semiconductor dual p-channel 175° mosfet iTime is halogen-free.
TrenchFET power mosfet
Compliant to RoHS directive 2002/95/EC
Surface mounted on 1 x 1 FR4 board
Related links
- Vishay N-Channel MOSFET 60 V 8-SOIC SI4948BEY-T1-E3
- Vishay Dual P-Channel MOSFET 60 V, 8-Pin SOIC SI4948BEY-T1-GE3
- Vishay N-Channel MOSFET 60 V, 8-Pin PowerPAK SO-8 SI7850DP-T1-E3
- Vishay N-Channel MOSFET 20 V TSSOP-8 SI6968BEDQ-T1-E3
- Vishay N-Channel MOSFET 150 V PowerPAK 1212-8 SI7818DN-T1-E3
- Vishay N-Channel MOSFET 200 V PowerPAK SO-8 SI7464DP-T1-E3
- Vishay N-Channel MOSFET 500 V, 3-Pin DPAK IRFR420TRPBF
- Vishay N-Channel MOSFET 500 V, 3-Pin IPAK IRFU420PBF
