Infineon HEXFET Type N-Channel MOSFET, 2.4 A, 30 V Enhancement, 8-Pin SOIC IRF7503TRPBF
- RS stock no.:
- 262-6740
- Distrelec Article No.:
- 304-41-669
- Mfr. Part No.:
- IRF7503TRPBF
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 25 units)*
R 230,10
(exc. VAT)
R 264,625
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | R 9.204 | R 230.10 |
| 50 - 75 | R 8.974 | R 224.35 |
| 100 - 475 | R 8.704 | R 217.60 |
| 500 - 1975 | R 8.356 | R 208.90 |
| 2000 + | R 8.022 | R 200.55 |
*price indicative
- RS stock no.:
- 262-6740
- Distrelec Article No.:
- 304-41-669
- Mfr. Part No.:
- IRF7503TRPBF
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 2.4A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOIC | |
| Series | HEXFET | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 222mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 7.8nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 1.25W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 2.4A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOIC | ||
Series HEXFET | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 222mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 7.8nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 1.25W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. It has smallest footprint which makes it ideal for applications for where printed circuit board space is at premium.
Ultra low resistance
Available in tape and reel
Very small SOIC package
Related links
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