Vishay Type N-Channel MOSFET, 43.4 A, 60 V Depletion, 8-Pin PowerPAK 1212-8 SIR4608LDP-T1-GE3
- RS stock no.:
- 252-0280
- Mfr. Part No.:
- SIR4608LDP-T1-GE3
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
Subtotal (1 pack of 5 units)*
R 158,47
(exc. VAT)
R 182,24
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 6,035 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | R 31.694 | R 158.47 |
| 50 - 95 | R 30.902 | R 154.51 |
| 100 - 245 | R 29.974 | R 149.87 |
| 250 - 995 | R 28.776 | R 143.88 |
| 1000 + | R 27.624 | R 138.12 |
*price indicative
- RS stock no.:
- 252-0280
- Mfr. Part No.:
- SIR4608LDP-T1-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 43.4A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PowerPAK 1212-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.01mΩ | |
| Channel Mode | Depletion | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 83W | |
| Forward Voltage Vf | 1.1V | |
| Typical Gate Charge Qg @ Vgs | 56nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 6.15mm | |
| Width | 5.15 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 43.4A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PowerPAK 1212-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.01mΩ | ||
Channel Mode Depletion | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 83W | ||
Forward Voltage Vf 1.1V | ||
Typical Gate Charge Qg @ Vgs 56nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 6.15mm | ||
Width 5.15 mm | ||
Automotive Standard AEC-Q101 | ||
The Vishay siliconix MOSFET product line includes a diverse range of advanced technologies. MOSFETs are transistor devices which are controlled by a capacitor. The field effect means that they are controlled by voltage. N-Channel MOSFETs contain additional electrons which are free to move around. They are a more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.
TrenchFET Gen V power MOSFET
Very low RDS - Qg figure-of-merit (FOM)
Tuned for the lowest RDS - Qoss FOM
100 % Rg and UIS tested
Related links
- Vishay N-Channel MOSFET 60 V, 8-Pin PowerPak 1212-8 SIR4608LDP-T1-GE3
- Vishay N-Channel MOSFET 60 V, 8-Pin PowerPAK 1212-8 SIS4608LDN-T1-GE3
- Vishay N-Channel MOSFET 100 V, 8-Pin PowerPAK 1212-8 SIS892ADN-T1-GE3
- Vishay N-Channel MOSFET 80 V, 8-Pin PowerPAK 1212-8 SIS126DN-T1-GE3
- Vishay N-Channel MOSFET 60 V, 8-Pin PowerPAK 1212-8 SIS4604LDN-T1-GE3
- Vishay N-Channel MOSFET 80 V, 8-Pin PowerPAK 1212-8 SiS128LDN-T1-GE3
- Vishay N-Channel MOSFET 60 V, 8-Pin PowerPAK 1212-8 SIS862ADN-T1-GE3
- Vishay N-Channel MOSFET 60 V, 8-Pin PowerPAK 1212-8 SIS4608DN-T1-GE3