Vishay Type N-Channel MOSFET, 45.9 A, 60 V Depletion, 8-Pin PowerPAK 1212-8 SIS4604LDN-T1-GE3
- RS stock no.:
- 252-0285
- Mfr. Part No.:
- SIS4604LDN-T1-GE3
- Manufacturer:
- Vishay
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Bulk discount available
Subtotal (1 pack of 10 units)*
R 147,07
(exc. VAT)
R 169,13
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 6,050 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | R 14.707 | R 147.07 |
| 50 - 90 | R 14.339 | R 143.39 |
| 100 - 240 | R 13.909 | R 139.09 |
| 250 - 990 | R 13.353 | R 133.53 |
| 1000 + | R 12.819 | R 128.19 |
*price indicative
- RS stock no.:
- 252-0285
- Mfr. Part No.:
- SIS4604LDN-T1-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 45.9A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PowerPAK 1212-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.01mΩ | |
| Channel Mode | Depletion | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 33.7W | |
| Forward Voltage Vf | 1.1V | |
| Typical Gate Charge Qg @ Vgs | 14.5nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 3.3mm | |
| Width | 3.3 mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 45.9A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PowerPAK 1212-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.01mΩ | ||
Channel Mode Depletion | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 33.7W | ||
Forward Voltage Vf 1.1V | ||
Typical Gate Charge Qg @ Vgs 14.5nC | ||
Maximum Operating Temperature 175°C | ||
Length 3.3mm | ||
Width 3.3 mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Vishay siliconix MOSFET product line includes a diverse range of advanced technologies. MOSFETs are transistor devices which are controlled by a capacitor. The field effect means that they are controlled by voltage. N-Channel MOSFETs contain additional electrons which are free to move around. They are a more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.
TrenchFET Gen V power MOSFET
Very low RDS - Qg figure-of-merit (FOM)
Tuned for the lowest RDS - Qoss FOM
100 % Rg and UIS tested
Related links
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