Vishay E Type N-Channel Power MOSFET, 19 A, 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK185N60E-T1-GE3
- RS stock no.:
- 252-0268
- Mfr. Part No.:
- SIHK185N60E-T1-GE3
- Manufacturer:
- Vishay
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View bulk pricing optionsSubtotal (1 pack of 2 units)*
R 180,04
(exc. VAT)
R 207,04
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 2,050 unit(s) shipping from 22 June 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 48 | R 90.02 | R 180.04 |
| 50 - 98 | R 87.77 | R 175.54 |
| 100 - 248 | R 85.135 | R 170.27 |
| 250 - 998 | R 81.73 | R 163.46 |
| 1000 + | R 78.46 | R 156.92 |
*price indicative
- RS stock no.:
- 252-0268
- Mfr. Part No.:
- SIHK185N60E-T1-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 19A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PowerPAK 10 x 12 | |
| Series | E | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.16Ω | |
| Channel Mode | Depletion | |
| Maximum Power Dissipation Pd | 114W | |
| Typical Gate Charge Qg @ Vgs | 33nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | +150°C | |
| Length | 6.15mm | |
| Standards/Approvals | RoHS | |
| Width | 5.15mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 19A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PowerPAK 10 x 12 | ||
Series E | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.16Ω | ||
Channel Mode Depletion | ||
Maximum Power Dissipation Pd 114W | ||
Typical Gate Charge Qg @ Vgs 33nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature +150°C | ||
Length 6.15mm | ||
Standards/Approvals RoHS | ||
Width 5.15mm | ||
Automotive Standard AEC-Q101 | ||
Vishay Series E Power MOSFET, 650V Maximum Drain Source Voltage, 19A Maximum Continuous Drain Current - SIHK185N60E-T1-GE3
This power MOSFET is a high-voltage switching device for power conversion and control in demanding electronic systems. Designed for surface mounting in Compact assemblies, it operates as an N-channel depletion-mode transistor and is suitable for applications requiring elevated temperature endurance and robust voltage handling.
Features and Benefits:
• 650V drain rating enables high-voltage switching capability • 19A continuous drain current supports substantial load handling • 0.16Ω Rds(on) minimises conduction losses for improved efficiency • 33nC typical gate charge allows predictable switching energy • 114W power dissipation manages thermal load in Compact layouts • ±20V gate tolerance simplifies gate-drive design and protection
Applications
• Suitable for high-voltage power supplies in industrial automation • Ideal for inverter stages in motor-control systems • Used for DC-DC conversion in heavy-duty electrical equipment • Can be used for switch-mode functions in power-distribution modules
What operating temperature range can it withstand?
It functions between -55°C and +150°C, enabling use in environments with wide thermal variation.
What package type is provided for PCB integration?
The device is supplied in a surface-mount PowerPAK 10x12 package with eight pins for Compact assembly.
How does the device meet automotive development needs?
It conforms to AEC-Q101 qualification, supporting designs that require automotive-grade component robustness.
What are the physical footprint dimensions?
The component measures 6.15mm in length and 5.15mm in width for space-conscious layouts.
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