Vishay Type N-Channel MOSFET, 19 A, 650 V Depletion, 8-Pin PowerPAK 10 x 12

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Bulk discount available

Subtotal (1 reel of 2000 units)*

R 61 102,00

(exc. VAT)

R 70 268,00

(inc. VAT)

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Orders below R 1 500,00 (exc. VAT) cost R 120,00.
In Stock
  • Plus 2,000 unit(s) shipping from 13 February 2026
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Units
Per unit
Per Reel*
2000 - 4000R 30.551R 61,102.00
6000 +R 29.787R 59,574.00

*price indicative

RS stock no.:
252-0267
Mfr. Part No.:
SIHK185N60E-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

19A

Maximum Drain Source Voltage Vds

650V

Package Type

PowerPAK 10 x 12

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.05mΩ

Channel Mode

Depletion

Typical Gate Charge Qg @ Vgs

54nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

132W

Forward Voltage Vf

1.1V

Maximum Operating Temperature

175°C

Length

6.15mm

Standards/Approvals

No

Width

5.15 mm

Automotive Standard

AEC-Q101

The Vishay siliconix MOSFET product line includes a diverse range of advanced technologies. MOSFETs are transistor devices which are controlled by a capacitor. The field effect means that they are controlled by voltage.

4th generation E series technology

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

Reduced switching and conduction losses

Avalanche energy rated (UIS)

Kelvin connection for reduced gate noise

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