Infineon BSR Type N-Channel MOSFET, 3.7 A, 40 V Enhancement, 3-Pin SOT-223 BSR802NL6327HTSA1
- RS stock no.:
- 250-0540
- Distrelec Article No.:
- 304-40-497
- Mfr. Part No.:
- BSR802NL6327HTSA1
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 pack of 5 units)*
R 11,70
(exc. VAT)
R 13,45
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 1,050 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | R 2.34 | R 11.70 |
| 10 - 95 | R 2.282 | R 11.41 |
| 100 - 245 | R 2.214 | R 11.07 |
| 250 - 495 | R 2.126 | R 10.63 |
| 500 + | R 2.04 | R 10.20 |
*price indicative
- RS stock no.:
- 250-0540
- Distrelec Article No.:
- 304-40-497
- Mfr. Part No.:
- BSR802NL6327HTSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3.7A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | BSR | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.4mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3.7A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series BSR | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.4mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon makes this Optimos 2 Small-Signal-Transistor. It is a P-channel, Enhancement mode transistor widely used in high-switching applications. It is avalanche rated and halogen-free.
Logic level (4.5V rated)
Avalanche rated and 100% lead-free
Maximum power dissipation is 360 mW
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