DiodesZetex Type P-Channel MOSFET, 3.7 A, 40 V Enhancement, 6-Pin SOT-26
- RS stock no.:
- 122-3265
- Mfr. Part No.:
- ZXMP4A57E6TA
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
Subtotal (1 reel of 3000 units)*
R 11 130,00
(exc. VAT)
R 12 810,00
(inc. VAT)
Add 3000 units to get free delivery
Temporarily out of stock
- Shipping from 21 August 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | R 3.71 | R 11,130.00 |
| 6000 - 9000 | R 3.617 | R 10,851.00 |
| 12000 - 27000 | R 3.509 | R 10,527.00 |
| 30000 - 57000 | R 3.368 | R 10,104.00 |
| 60000 + | R 3.233 | R 9,699.00 |
*price indicative
- RS stock no.:
- 122-3265
- Mfr. Part No.:
- ZXMP4A57E6TA
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3.7A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SOT-26 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 150mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 15.8nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.7W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | -0.95V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.1mm | |
| Width | 1.7 mm | |
| Height | 1.3mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3.7A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SOT-26 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 150mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 15.8nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.7W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf -0.95V | ||
Maximum Operating Temperature 150°C | ||
Length 3.1mm | ||
Width 1.7 mm | ||
Height 1.3mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
P-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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