Infineon BSP Type N-Channel MOSFET, 0.12 A, 40 V Enhancement, 3-Pin SOT-223 BSP125H6433XTMA1

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Subtotal (1 pack of 5 units)*

R 47,35

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R 54,45

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 5R 9.47R 47.35
10 - 95R 9.234R 46.17
100 - 245R 8.956R 44.78
250 - 495R 8.598R 42.99
500 +R 8.254R 41.27

*price indicative

Packaging Options:
RS stock no.:
250-0528
Mfr. Part No.:
BSP125H6433XTMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

0.12A

Maximum Drain Source Voltage Vds

40V

Series

BSP

Package Type

SOT-223

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.4mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

81W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1V

Typical Gate Charge Qg @ Vgs

80nC

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon Small Signal n-channel products are suitable for automotive applications. This SIPMOS Power-Transistor is an N-Channel, Enhancement mode with Vds of 600 V, Rds(on) 45 Ω and Id is 0.12 A. It is dv/dt rated.

Pb-free lead plating

Maximum power dissipation is 360mW

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