Infineon BSP N-Channel MOSFET, 120 mA, 600 V Enhancement, 3-Pin SOT-223 BSP125H6433XTMA1
- RS stock no.:
- 250-0528
- Mfr. Part No.:
- BSP125H6433XTMA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
R 98,88
(exc. VAT)
R 113,71
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | R 19.776 | R 98.88 |
| 10 - 95 | R 19.282 | R 96.41 |
| 100 - 245 | R 18.704 | R 93.52 |
| 250 - 495 | R 17.956 | R 89.78 |
| 500 + | R 17.238 | R 86.19 |
*price indicative
- RS stock no.:
- 250-0528
- Mfr. Part No.:
- BSP125H6433XTMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 120mA | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | SOT-223 | |
| Series | BSP | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 45000mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Power Dissipation Pd | 81W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 120mA | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type SOT-223 | ||
Series BSP | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 45000mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Power Dissipation Pd 81W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon Small Signal n-channel products are suitable for automotive applications. This SIPMOS Power-Transistor is an N-Channel, Enhancement mode with Vds of 600 V, Rds(on) 45 Ω and Id is 0.12 A. It is dv/dt rated.
Pb-free lead plating
Maximum power dissipation is 360mW
Related links
- Infineon BSP Type N-Channel MOSFET 40 V Enhancement, 3-Pin SOT-223
- Infineon BSP Type N-Channel MOSFET 40 V Depletion, 3-Pin SOT-223
- Infineon BSP Type N-Channel MOSFET 100 V Enhancement, 3-Pin SOT-223
- Infineon BSP Type N-Channel MOSFET 40 V Depletion, 3-Pin SOT-223 BSP129H6906XTSA1
- Infineon BSP Type N-Channel MOSFET 40 V Depletion, 3-Pin SOT-223 BSP149H6906XTSA1
- Infineon BSP Type N-Channel MOSFET 100 V Enhancement, 3-Pin SOT-223 BSP296NH6433XTMA1
- Infineon BSP Type N-Channel MOSFET 100 V Enhancement, 3-Pin SOT-223
- Infineon BSP Type N-Channel MOSFET 100 V Enhancement, 3-Pin SOT-223 BSP316PH6327XTSA1