Infineon BSP Type N-Channel MOSFET, 0.12 A, 40 V Enhancement, 3-Pin SOT-223 BSP125H6433XTMA1

Image representative of range

Bulk discount available

Subtotal (1 pack of 5 units)*

R 48,68

(exc. VAT)

R 55,98

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • Plus 3,935 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
5 - 5R 9.736R 48.68
10 - 95R 9.492R 47.46
100 - 245R 9.208R 46.04
250 - 495R 8.84R 44.20
500 +R 8.486R 42.43

*price indicative

Packaging Options:
RS stock no.:
250-0528
Mfr. Part No.:
BSP125H6433XTMA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

0.12A

Maximum Drain Source Voltage Vds

40V

Package Type

SOT-223

Series

BSP

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.4mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

80nC

Maximum Power Dissipation Pd

81W

Forward Voltage Vf

1V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon Small Signal n-channel products are suitable for automotive applications. This SIPMOS Power-Transistor is an N-Channel, Enhancement mode with Vds of 600 V, Rds(on) 45 Ω and Id is 0.12 A. It is dv/dt rated.

Pb-free lead plating

Maximum power dissipation is 360mW

Related links