Infineon BSP Type N-Channel MOSFET, 0.12 A, 40 V Enhancement, 3-Pin SOT-223

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Subtotal (1 reel of 4000 units)*

R 18 064,00

(exc. VAT)

R 20 772,00

(inc. VAT)

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Units
Per unit
Per Reel*
4000 - 4000R 4.516R 18,064.00
8000 - 8000R 4.403R 17,612.00
12000 +R 4.271R 17,084.00

*price indicative

RS stock no.:
250-0527
Mfr. Part No.:
BSP125H6433XTMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

0.12A

Maximum Drain Source Voltage Vds

40V

Package Type

SOT-223

Series

BSP

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.4mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

81W

Forward Voltage Vf

1V

Typical Gate Charge Qg @ Vgs

80nC

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon Small Signal n-channel products are suitable for automotive applications. This SIPMOS Power-Transistor is an N-Channel, Enhancement mode with Vds of 600 V, Rds(on) 45 Ω and Id is 0.12 A. It is dv/dt rated.

Pb-free lead plating

Maximum power dissipation is 360mW

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