Infineon Dual N Channel Normal Level IPG20N06S4-15A 2 Type N-Channel MOSFET, 20 A, 60 V Dual N, 8-Pin SuperSO8 5 x 6
- RS stock no.:
- 249-6918
- Mfr. Part No.:
- IPG20N06S415AATMA1
- Manufacturer:
- Infineon
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Subtotal (1 pack of 5 units)*
R 112,81
(exc. VAT)
R 129,73
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 4,755 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | R 22.562 | R 112.81 |
| 10 - 95 | R 21.998 | R 109.99 |
| 100 - 245 | R 21.338 | R 106.69 |
| 250 - 495 | R 20.484 | R 102.42 |
| 500 + | R 19.664 | R 98.32 |
*price indicative
- RS stock no.:
- 249-6918
- Mfr. Part No.:
- IPG20N06S415AATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | IPG20N06S4-15A | |
| Package Type | SuperSO8 5 x 6 | |
| Pin Count | 8 | |
| Channel Mode | Dual N | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 50W | |
| Typical Gate Charge Qg @ Vgs | 22nC | |
| Transistor Configuration | Dual N Channel Normal Level | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series IPG20N06S4-15A | ||
Package Type SuperSO8 5 x 6 | ||
Pin Count 8 | ||
Channel Mode Dual N | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 50W | ||
Typical Gate Charge Qg @ Vgs 22nC | ||
Transistor Configuration Dual N Channel Normal Level | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS is power MOSFET for automotive applications. Operating channel is N. It is AEC Q101 qualified. MSL1 up to 260°C peak reflow. Green Product (RoHS compliant) and it is 100% Avalanche tested.
175°C operating temperature
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