Infineon Dual N Channel Normal Level Enhancement Mode IPG16N10S4-61 Type N-Channel MOSFET, 16 A, 100 V Dual N, 8-Pin
- RS stock no.:
- 243-9342
- Mfr. Part No.:
- IPG16N10S461ATMA1
- Manufacturer:
- Infineon
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Bulk discount available
View bulk pricing optionSubtotal (1 pack of 5 units)*
R 67,73
(exc. VAT)
R 77,89
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 14,770 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | R 13.546 | R 67.73 |
| 10 - 95 | R 13.208 | R 66.04 |
| 100 - 245 | R 12.812 | R 64.06 |
| 250 - 495 | R 12.30 | R 61.50 |
| 500 + | R 11.808 | R 59.04 |
*price indicative
- RS stock no.:
- 243-9342
- Mfr. Part No.:
- IPG16N10S461ATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 16A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SuperSO8 5 x 6 | |
| Series | IPG16N10S4-61 | |
| Pin Count | 8 | |
| Channel Mode | Dual N | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 5.4nC | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 29W | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | Dual N Channel Normal Level Enhancement Mode | |
| Standards/Approvals | RoHS, AEC Q101 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 16A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SuperSO8 5 x 6 | ||
Series IPG16N10S4-61 | ||
Pin Count 8 | ||
Channel Mode Dual N | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 5.4nC | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 29W | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration Dual N Channel Normal Level Enhancement Mode | ||
Standards/Approvals RoHS, AEC Q101 | ||
Automotive Standard AEC-Q101 | ||
The Infineon has MOSFET which is Dual N-channel normal level-Logic Level,AEC Q101 qualified and 100% Avalanche tested.
N Channel
100% Avalanche tested
AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green Product (RoHS compliant)
Related links
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