Infineon iPB Type P-Channel MOSFET, 273 A, 100 V Enhancement, 3-Pin TO-263 IPB80P03P4L04ATMA2

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R 51,24

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R 58,93

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1 - 9R 51.24
10 - 99R 49.96
100 - 249R 48.46
250 - 499R 46.52
500 +R 44.66

*price indicative

Packaging Options:
RS stock no.:
249-6909
Mfr. Part No.:
IPB80P03P4L04ATMA2
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

273A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-263

Series

iPB

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.7mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

80nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

81W

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon OptiMOS is power MOSFET for automotive applications. Operating channel is N. It is AEC Q101 qualified. MSL1 up to 260°C peak reflow. Green Product (RoHS compliant) and it is 100% Avalanche tested.

175°C operating temperature

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