Infineon iPB Type P-Channel MOSFET, 120 A, 40 V Enhancement, 3-Pin TO-263 IPB120P04P4L03ATMA2
- RS stock no.:
- 229-1819
- Mfr. Part No.:
- IPB120P04P4L03ATMA2
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 5 units)*
R 358,95
(exc. VAT)
R 412,80
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- 630 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | R 71.79 | R 358.95 |
| 10 - 95 | R 69.996 | R 349.98 |
| 100 - 245 | R 67.896 | R 339.48 |
| 250 - 495 | R 65.18 | R 325.90 |
| 500 + | R 62.572 | R 312.86 |
*price indicative
- RS stock no.:
- 229-1819
- Mfr. Part No.:
- IPB120P04P4L03ATMA2
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | iPB | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.1mΩ | |
| Channel Mode | Enhancement | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series iPB | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.1mΩ | ||
Channel Mode Enhancement | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
IPB120P04P4L-03, -40V, P-Ch, 3.1 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-P2
The Infineon p channel logic level MOSFET has highest current capability and 100 percent avalanche tested. It has lowest switching and conduction power losses for highest thermal efficiency.
Summary of Features
•P-channel - Logic Level - Enhancement mode
•AEC qualified
•MSL1 up to 260°C peak reflow
•175°C operating temperature
•Green package (RoHS compliant)
•100% Avalanche tested
Benefits
•No charge pump required for high side drive.
•Simple interface drive circuit
•World's lowest RDSon at 40V
•Highest current capability
•Lowest switching and conduction power losses for highest thermal efficiency
•Robust packages with superior quality and reliability
•Standard packages TO-252, TO-263, TO-220, TO-262
Potential Applications
•High-Side MOSFETs for motor bridges (half-bridges, H-bridges, 3-phase-motors)
•Bridge configuration could be realized with 40V P-Channel as high side device with no need of charge pump
Related links
- Infineon IPB Silicon P-Channel MOSFET 40 V, 3-Pin D2PAK IPB120P04P4L03ATMA2
- Infineon IPB Silicon P-Channel MOSFET 40 V, 7-Pin D2PAK-7 IPB180P04P4L02ATMA2
- Infineon IPP Silicon P-Channel MOSFET 40 V, 3-Pin TO-220 IPP120P04P4L03AKSA2
- Infineon HEXFET Silicon P-Channel MOSFET 150 V, 3-Pin D2PAK AUIRF6215STRL
- Infineon HEXFET Dual Silicon P-Channel MOSFET 55 V, 3-Pin D2PAK IRF9Z34NSTRLPBF
- Infineon OptiMOS P P-Channel MOSFET 40 V, 3-Pin D2PAK IPB120P04P4L03ATMA1
- Microchip TP0610T Silicon P-Channel MOSFET 60 V, 3-Pin SOT-23 TP0610T-G
- Infineon HEXFET Dual Silicon P-Channel MOSFET 55 V, 3-Pin DPAK IRFR9024NTRLPBF
