Infineon Half Bridge OptiMOS-TM6 Type N-Channel Power MOSFET, 60 A, 40 V Enhancement, 8-Pin SuperSO8 5 x 6

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Subtotal (1 pack of 2 units)*

R 52,33

(exc. VAT)

R 60,18

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 8R 26.165R 52.33
10 - 98R 25.51R 51.02
100 - 248R 24.745R 49.49
250 - 498R 23.755R 47.51
500 +R 22.805R 45.61

*price indicative

Packaging Options:
RS stock no.:
249-6892
Mfr. Part No.:
IAUC60N04S6N031HATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

60A

Maximum Drain Source Voltage Vds

40V

Series

OptiMOS-TM6

Package Type

SuperSO8 5 x 6

Pin Count

8

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

75W

Typical Gate Charge Qg @ Vgs

23nC

Forward Voltage Vf

1.1V

Minimum Operating Temperature

-55°C

Transistor Configuration

Half Bridge

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon OptiMOS is power MOSFET for automotive applications. Operating channel is N. It is AEC Q101 qualified. MSL1 up to 260°C peak reflow. Green Product (RoHS compliant) and it is 100% Avalanche tested.

175°C operating temperature

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