Infineon Half Bridge IAUC45N04S6L063H Type N-Channel MOSFET, 45 A, 40 V Enhancement, 8-Pin SuperSO8 5 x 6
- RS stock no.:
- 249-6883
- Mfr. Part No.:
- IAUC45N04S6L063HATMA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 reel of 5000 units)*
R 33 545,00
(exc. VAT)
R 38 575,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 08 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 5000 - 5000 | R 6.709 | R 33,545.00 |
| 10000 - 10000 | R 6.541 | R 32,705.00 |
| 15000 + | R 6.345 | R 31,725.00 |
*price indicative
- RS stock no.:
- 249-6883
- Mfr. Part No.:
- IAUC45N04S6L063HATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 45A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SuperSO8 5 x 6 | |
| Series | IAUC45N04S6L063H | |
| Pin Count | 8 | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 13nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 41W | |
| Maximum Gate Source Voltage Vgs | ±16 V | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | Half Bridge | |
| Standards/Approvals | AEC Q101, RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 45A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SuperSO8 5 x 6 | ||
Series IAUC45N04S6L063H | ||
Pin Count 8 | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 13nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 41W | ||
Maximum Gate Source Voltage Vgs ±16 V | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration Half Bridge | ||
Standards/Approvals AEC Q101, RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS is power MOSFET for automotive applications. Operating channel is N. It is AEC Q101 qualified. MSL1 up to 260°C peak reflow. Green Product (RoHS compliant) and it is 100% Avalanche tested.
175°C operating temperature
Related links
- Infineon N-Channel MOSFET 40 V, 8-Pin SuperSO8 5 x 6 IAUC45N04S6L063HATMA1
- Infineon N-Channel MOSFET 40 V, 8-Pin SuperSO8 5 x 6 IAUC45N04S6N070HATMA1
- Infineon N-Channel MOSFET Transistor 40 V, 8-Pin SuperSO8 5 x 6 IPZ40N04S5L2R8ATMA1
- Infineon N-Channel MOSFET Transistor 80 V, 8-Pin SuperSO8 5 x 6 IAUZ20N08S5L300ATMA1
- Infineon N-Channel MOSFET Transistor 100 V, 8-Pin SuperSO8 5 x 6 IAUC24N10S5L300ATMA1
- Infineon N-Channel MOSFET Transistor 20 V, 8-Pin SuperSO8 5 x 6 IAUC60N04S6N044ATMA1
- Infineon N-Channel MOSFET Transistor 100 V, 8-Pin SuperSO8 5 x 6 IAUZ30N10S5L240ATMA1
- Infineon N-Channel MOSFET 25 V, 8-Pin SuperSO8 5 x 6 BSZ017NE2LS5IATMA1