Infineon IMZA Type N-Channel MOSFET, 225 A, 75 V N, 4-Pin TO-247 IMZA120R040M1HXKSA1
- RS stock no.:
- 248-6680
- Mfr. Part No.:
- IMZA120R040M1HXKSA1
- Manufacturer:
- Infineon
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Subtotal (1 unit)*
R 299,09
(exc. VAT)
R 343,95
(inc. VAT)
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Units | Per unit |
|---|---|
| 1 - 9 | R 299.09 |
| 10 - 49 | R 291.61 |
| 50 - 99 | R 282.86 |
| 100 - 149 | R 271.55 |
| 150 + | R 260.69 |
*price indicative
- RS stock no.:
- 248-6680
- Mfr. Part No.:
- IMZA120R040M1HXKSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 225A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Package Type | TO-247 | |
| Series | IMZA | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Channel Mode | N | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 225A | ||
Maximum Drain Source Voltage Vds 75V | ||
Package Type TO-247 | ||
Series IMZA | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Channel Mode N | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon CoolSiC 1200 V, 40 mΩ SiC MOSFET in TO247-4 package build on a state of the art trench semiconductor process optimized to combine performance with reliability, these includes, the lowest gate charge and device capacitance levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses, and threshold-free on-state characteristic and the CoolSiC MOSFETs are ideal for hard and resonant switching topologies like power factor correction (PFC) circuits, bi-directional topologies and DC-DC converters or DC-AC inverters.
VDSS - 1200 V at T - 25°C
IDCC - 55 A at T - 25°C
RDS(on) - 39 mohm at VGS - 18 V, T - 25°C
Very low switching losses
Short circuit withstand time 3 microsecond
Benchmark gate threshold voltage, VGS(th) - 4.2 V
Robust against parasitic turn on, 0 V turn-off gate voltage can be applied
Robust body diode for hard commutation
XT interconnection technology for best-in-class thermal performance
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- ROHM SiC N-Channel MOSFET 1200 V, 4-Pin TO-247-4L SCT3040KRC15
- Infineon AIM SiC N-Channel MOSFET 1200 V, 4-Pin PG-TO247-4 AIMZH120R040M1TXKSA1
- Infineon IMZC120 SiC N-Channel MOSFET 1200 V, 4-Pin PG-TO247-4-U07 IMZC120R034M2HXKSA1
- Infineon N-Channel MOSFET 1200 V, 4-Pin TO-247-4 IMZA120R014M1HXKSA1
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