DiodesZetex Dual 2 Type N-Channel MOSFET, 30 V Enhancement, 6-Pin UDFN-2020 DMT3020UFDB-7

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Subtotal (1 pack of 25 units)*

R 197,45

(exc. VAT)

R 227,075

(inc. VAT)

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Units
Per unit
Per Pack*
25 - 25R 7.898R 197.45
50 - 75R 7.701R 192.53
100 - 225R 7.47R 186.75
250 - 975R 7.171R 179.28
1000 +R 6.884R 172.10

*price indicative

Packaging Options:
RS stock no.:
246-7547
Mfr. Part No.:
DMT3020UFDB-7
Manufacturer:
DiodesZetex
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Brand

DiodesZetex

Product Type

MOSFET

Channel Type

Type N

Maximum Drain Source Voltage Vds

30V

Package Type

UDFN-2020

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

0.03Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

0.86W

Maximum Gate Source Voltage Vgs

12 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

8.8nC

Maximum Operating Temperature

150°C

Transistor Configuration

Dual

Standards/Approvals

RoHS

Number of Elements per Chip

2

Automotive Standard

No

The DiodesZetex makes a dual N-channel enhancement mode MOSFET, designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in U-DFN2020-6 packaging and 0.6mm profile makes it ideal for low profile applications . It offers fast switching and high efficiency. Its 100% unclamped inductive switching ensures more reliable and robust end application.

Maximum drain to source voltage is 30 V Maximum gate to source voltage is ±12 V It has PCB Footprint of 4mm^2 It offers low gate threshold voltage It provides an ESD protected Gate

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