DiodesZetex 2 Type N-Channel MOSFET, 100 V Enhancement, 6-Pin UDFN-2020 DMN10H6D2LFDB-7
- RS stock no.:
- 246-7507
- Mfr. Part No.:
- DMN10H6D2LFDB-7
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
Subtotal (1 pack of 25 units)*
R 106,575
(exc. VAT)
R 122,55
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 2,925 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | R 4.263 | R 106.58 |
| 50 - 75 | R 4.157 | R 103.93 |
| 100 - 225 | R 4.032 | R 100.80 |
| 250 - 975 | R 3.871 | R 96.78 |
| 1000 + | R 3.716 | R 92.90 |
*price indicative
- RS stock no.:
- 246-7507
- Mfr. Part No.:
- DMN10H6D2LFDB-7
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | UDFN-2020 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 10Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 0.7W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 1.2nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type UDFN-2020 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 10Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 0.7W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 1.2nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The DiodesZetex makes an N-channel enhancement mode MOSFET, designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in U-DFN2020-6 packaging. It offers fast switching and high efficiency. It offers an ESD protected gate (up to 1kV).
Maximum drain to source voltage is 100 V Maximum gate to source voltage is ±20 V It offers a low gate threshold voltage It provides a low input capacitance
Related links
- Diodes Inc Dual N-Channel MOSFET 100 V, 6-Pin U-DFN2020 DMN10H6D2LFDB-7
- Diodes Inc DMN10H220LFDF N-Channel MOSFET 100 V, 6-Pin U-DFN2020 DMN10H220LFDF-7
- Diodes Inc Dual P-Channel MOSFET 20 V, 6-Pin U-DFN2020 DMP2110UFDB-7
- Diodes Inc N-Channel MOSFET 30 V, 6-Pin U-DFN2020 DMN3016LFDFQ-7
- Diodes Inc P-Channel MOSFET 12 V, 6-Pin U-DFN2020 DMP1009UFDF-7
- Diodes Inc DMT8030LFDF N-Channel MOSFET 80 V, 6-Pin U-DFN2020 DMT8030LFDF-7
- Diodes Inc DMP Plastic P-Channel MOSFET 40 V, 6-Pin U-DFN2020 DMP4047LFDEQ-7
- Diodes Inc Dual N-Channel MOSFET 30 V, 6-Pin U-DFN2020 DMT3020UFDB-7