DiodesZetex Type N-Channel MOSFET, 101 A, 100 V Enhancement, 3-Pin TO-220
- RS stock no.:
- 246-6864
- Mfr. Part No.:
- DMT10H9M9LCT
- Manufacturer:
- DiodesZetex
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Bulk discount available
Subtotal (1 tube of 50 units)*
R 1 064,05
(exc. VAT)
R 1 223,65
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 100 unit(s) shipping from 12 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | R 21.281 | R 1,064.05 |
| 100 - 450 | R 20.749 | R 1,037.45 |
| 500 - 950 | R 20.127 | R 1,006.35 |
| 1000 + | R 19.322 | R 966.10 |
*price indicative
- RS stock no.:
- 246-6864
- Mfr. Part No.:
- DMT10H9M9LCT
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 101A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.014Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.73W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.66mm | |
| Width | 4.82 mm | |
| Standards/Approvals | No | |
| Height | 31.24mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 101A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.014Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.73W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Length 10.66mm | ||
Width 4.82 mm | ||
Standards/Approvals No | ||
Height 31.24mm | ||
Automotive Standard AEC-Q101 | ||
The DiodesZetex makes a new generation N-channel enhancement mode MOSFET, designed to minimize the on-state resistance (RDS(ON)) yet maintain fast switching performance, making it ideal for high-efficiency power management applications. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in TO220AB packaging. It offers fast switching and high efficiency. Its 100% unclamped inductive switching ensures more reliable and robust end application.
Maximum drain to source voltage is 100 V and Maximum gate to source voltage is ±20 V It offers low on-resistance It has high BVDSS rating for power application It offers low input capacitance
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