Infineon IPD Type N-Channel MOSFET, 180 A, 75 V N, 3-Pin TO-252

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Subtotal (1 reel of 2500 units)*

R 36 995,00

(exc. VAT)

R 42 545,00

(inc. VAT)

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Units
Per unit
Per Reel*
2500 - 2500R 14.798R 36,995.00
5000 - 5000R 14.428R 36,070.00
7500 +R 13.995R 34,987.50

*price indicative

RS stock no.:
244-8550
Mfr. Part No.:
IPD80R450P7ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

180A

Maximum Drain Source Voltage Vds

75V

Series

IPD

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3mΩ

Channel Mode

N

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

80nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

81W

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon MOSFET 800V CoolMOS P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon’s over 18 years pioneering super junction technology innovation.

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