Infineon ISS Type P-Channel MOSFET, 0.18 A, 60 V Enhancement, 3-Pin SOT-23 ISS55EP06LMXTSA1
- RS stock no.:
- 244-2278
- Mfr. Part No.:
- ISS55EP06LMXTSA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
View bulk pricing optionSubtotal (1 pack of 15 units)*
R 37,515
(exc. VAT)
R 43,14
(inc. VAT)
FREE delivery for orders over R 1,500.00
Last RS stock
- Final 7,800 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 15 - 15 | R 2.501 | R 37.52 |
| 30 - 75 | R 2.439 | R 36.59 |
| 90 - 225 | R 2.365 | R 35.48 |
| 240 - 465 | R 2.271 | R 34.07 |
| 480 + | R 2.18 | R 32.70 |
*price indicative
- RS stock no.:
- 244-2278
- Mfr. Part No.:
- ISS55EP06LMXTSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 0.18A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-23 | |
| Series | ISS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 81W | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 0.18A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-23 | ||
Series ISS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 81W | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon P-Channel Power MOSFET has a design flexibility and ease of handling to meet the highest performance requirements which include the -12V range of products that are ideally suited for battery protection, reverse polarity protection, linear battery chargers, load switched, DC-DC converters, and low voltage drive applications.
P-Channel
Low On-resistance RDS(on)
100% Avalanche tested
Logic level or normal level
Enhancement mode
Pb-free lead plating; RoHS compliant
Halogen-free according to IEC61249-2-21
Related links
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