Infineon ISS Type P-Channel MOSFET, 3 A, 60 V Enhancement, 3-Pin SOT-23 ISS17EP06LMXTSA1
- RS stock no.:
- 244-2275
- Mfr. Part No.:
- ISS17EP06LMXTSA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 10 units)*
R 7,98
(exc. VAT)
R 9,18
(inc. VAT)
FREE delivery for orders over R 1,500.00
Last RS stock
- Final 1,820 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | R 0.798 | R 7.98 |
| 20 - 90 | R 0.778 | R 7.78 |
| 100 - 240 | R 0.755 | R 7.55 |
| 250 - 490 | R 0.725 | R 7.25 |
| 500 + | R 0.696 | R 6.96 |
*price indicative
- RS stock no.:
- 244-2275
- Mfr. Part No.:
- ISS17EP06LMXTSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | ISS | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 81W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series ISS | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 81W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon P-Channel Power MOSFET offer design flexibility and ease of handling to meet the highest performance requirements which include the -12V range of products that are ideally suited for battery protection, reverse polarity protection, linear battery chargers, load switched, DC-DC converters, and low voltage drive applications.
P-Channel
Low On-resistance RDS(on)
100% Avalanche tested
Logic level or normal level
Enhancement mode
Pb-free lead plating; RoHS compliant
Halogen-free according to IEC61249-2-21
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