Infineon IPN Type N-Channel MOSFET, 3 A, 650 V, 3-Pin SOT-223

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Bulk discount available

Subtotal (1 reel of 3000 units)*

R 12 897,00

(exc. VAT)

R 14 832,00

(inc. VAT)

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Units
Per unit
Per Reel*
3000 - 3000R 4.299R 12,897.00
6000 - 6000R 4.192R 12,576.00
9000 +R 4.066R 12,198.00

*price indicative

RS stock no.:
244-2266
Mfr. Part No.:
IPN60R2K0PFD7SATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

3A

Maximum Drain Source Voltage Vds

650V

Package Type

SOT-223

Series

IPN

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3mΩ

Maximum Power Dissipation Pd

81W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

80nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon 600V CoolMOS™ PFD7 superjunction MOSFET (IPN60R2K0PFD7S) complements the CoolMOS™ 7 offering for consumer applications.This product family is tailored to ultrahigh power density as well as highest efficiency designs.

Extremely low losses due to very low FOM RDS(on)*Qg and RDS(on)*Eoss

Low switching losses Eoss,excellent thermal behavior

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Wide range portfolio of RDS(on) and package variations

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